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Multicolor light-emitting devices with Tb2O3 on silicon
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AbstractGreat efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb2O3 on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb3+ ions in Tb2O3. The electroluminescence mechanisms of the Tb2O3 light-emitting devices are discussed. In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu3+, Sm3+ and Yb3+) doped Tb2O3 light-emitting devices.
Springer Science and Business Media LLC
Title: Multicolor light-emitting devices with Tb2O3 on silicon
Description:
AbstractGreat efforts have been devoted to achieving efficient Si-based light-emitting devices.
Here we report new light-emitting devices fabricated with Tb2O3 on Si substrates.
Intense green electroluminescence was observed, with a turn-on voltage of about 8 V.
The green emission is attributed to the characteristic transitions of Tb3+ ions in Tb2O3.
The electroluminescence mechanisms of the Tb2O3 light-emitting devices are discussed.
In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu3+, Sm3+ and Yb3+) doped Tb2O3 light-emitting devices.
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