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Si-Doped InGaN Films Grown on GaN Films
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High-quality Si-doped InGaN films were grown on GaN films for the first time. Strong and sharp band-edge (BE) emissions were observed at peak wavelengths between 400 nm and 425 nm, while deep-level emissions were not observed in photoluminescence (PL) measurements at room temperature. The intensity of BE emissions of Si-doped InGaN films was about 36 times stronger than that of undoped InGaN films and 20 times stronger than that of the blue emission (at 450 nm) of Mg-doped p-type GaN films. The smallest full width at half-maximum (FWHM) of the double-crystal X-ray rocking curve (XRC) from the Si-doped InGaN films was 6.4 minutes. This value of FWHM was the smallest ever reported for InGaN films.
Title: Si-Doped InGaN Films Grown on GaN Films
Description:
High-quality Si-doped InGaN films were grown on GaN films for the first time.
Strong and sharp band-edge (BE) emissions were observed at peak wavelengths between 400 nm and 425 nm, while deep-level emissions were not observed in photoluminescence (PL) measurements at room temperature.
The intensity of BE emissions of Si-doped InGaN films was about 36 times stronger than that of undoped InGaN films and 20 times stronger than that of the blue emission (at 450 nm) of Mg-doped p-type GaN films.
The smallest full width at half-maximum (FWHM) of the double-crystal X-ray rocking curve (XRC) from the Si-doped InGaN films was 6.
4 minutes.
This value of FWHM was the smallest ever reported for InGaN films.
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