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Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
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AbstractBase transit time, τb, in abrupt npn GaN/InGaN/GaN and AlGaN/GaN/AlGaN double heterojunction bipolar transistors (DHBTs) is reported. Base transit time strongly depends not only on the quasi-neutral base width, but also on the low field electron mobility, μn, in the neutral base region and the effective electron velocity, Sc, at the edge of base-collector heterojunction. μn and Sc are temperature-dependent parameters. A unity gain cut-off frequency of 10.6 GHz is obtained in AlGaN/GaN/AlGaN DHBTs and 19.1 GHz in GaN/InGaN/GaN DHBTs for a neutral base width of 0.05um. It is also shown that non-stationary transport is not required to study τb for neutral base width in the range of 0.05um for GaN-based HBTs.
Springer Science and Business Media LLC
Title: Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
Description:
AbstractBase transit time, τb, in abrupt npn GaN/InGaN/GaN and AlGaN/GaN/AlGaN double heterojunction bipolar transistors (DHBTs) is reported.
Base transit time strongly depends not only on the quasi-neutral base width, but also on the low field electron mobility, μn, in the neutral base region and the effective electron velocity, Sc, at the edge of base-collector heterojunction.
μn and Sc are temperature-dependent parameters.
A unity gain cut-off frequency of 10.
6 GHz is obtained in AlGaN/GaN/AlGaN DHBTs and 19.
1 GHz in GaN/InGaN/GaN DHBTs for a neutral base width of 0.
05um.
It is also shown that non-stationary transport is not required to study τb for neutral base width in the range of 0.
05um for GaN-based HBTs.
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