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Poly-Resistor Thin Film Formation by Excimer Laser Micromachine
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A simple theoretical model and resistor fabrication for calculating the resistance of a polycrystalline silicon thin film is presented. The resistance value for poly-resistor is perfomed in terms of polysilicon thickness and its total area. The KrF excimer laser micromachine is used in assisting the resistor formation for a low pressure chemical vapor deposition (LPCVD) based polysilicon. Laser micromachine with three main parameters is used to aid the fabrication of the poly-resistor; namely as the pulse rate (i.e. number of laser pulses per second), laser beam size and laser energy. These parameters have been investigated to create the isolation between materials and also to achieve the desired poly-resistor shape. Preliminary results show that the 35 um beam size and 15 mJ of energy level is the most effective parameter to produce the pattern. Poly-resistor formation with 12 and 21 number of squares shows the total average resistance of 303.52 Ω and 210.14 Ω respectively. The laser micromachine process also significantly reduce the total time and number of process steps that are required for resistor fabrication.
Trans Tech Publications, Ltd.
Title: Poly-Resistor Thin Film Formation by Excimer Laser Micromachine
Description:
A simple theoretical model and resistor fabrication for calculating the resistance of a polycrystalline silicon thin film is presented.
The resistance value for poly-resistor is perfomed in terms of polysilicon thickness and its total area.
The KrF excimer laser micromachine is used in assisting the resistor formation for a low pressure chemical vapor deposition (LPCVD) based polysilicon.
Laser micromachine with three main parameters is used to aid the fabrication of the poly-resistor; namely as the pulse rate (i.
e.
number of laser pulses per second), laser beam size and laser energy.
These parameters have been investigated to create the isolation between materials and also to achieve the desired poly-resistor shape.
Preliminary results show that the 35 um beam size and 15 mJ of energy level is the most effective parameter to produce the pattern.
Poly-resistor formation with 12 and 21 number of squares shows the total average resistance of 303.
52 Ω and 210.
14 Ω respectively.
The laser micromachine process also significantly reduce the total time and number of process steps that are required for resistor fabrication.
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