Model of Spin-Tunnel Junction Magnetization Reversal with Synthetic Antiferromagnet

The aim of this study is to develop a theoretical model of magnetization switching in spin-tunnel junctions that will enable evaluation of the magnetoresistance dependence in nanostructures with synthetic antiferromagnet. This plays a crucial role in the design of spintronic devices. Spintronic sensors are becoming increasingly sought-after due to their unique combination of characteristics: high sensitivity, compact size, and low power consumption. A theoretical model of magnetization switching in a spin-tunnel junction with a synthetic antiferromagnet has been developed, based on the concept of coherent rotation of magnetization vectors. By neglecting uniaxial anisotropy energies, a novel analytical solution for the magnetization reversal of synthetic antiferromagnet layers has been obtained. Comparison with exact numerical solutions demonstrates good quantitative agreement for typical parameters of spin-tunnel junctions. The dependences cos(9r) are presented, obtained from both analytical and numerical solutions for the RKKY exchange energy corresponding to the second antiferromagnetic maximum. The results of both approaches show nearly perfect agreement, confirming the validity of the analytical solution and its ability to quantitatively describe the magnetization switching process in spin-tunnel junctions with a synthetic antiferromagnet with high accuracy. The obtained dependences will enable prediction of the magnetization switching behavior in spin-tunnel junctions with a synthetic antiferromagnet for various material compositions and layer thicknesses.