High-order Harmonic Generation in a Doped Semiconductor by Inhomogeneous Laser Field

Abstract Background High order harmonic generation has emerged as a reliable method in spectroscopy, production of high frequency light and attosecond pulses. Since its inception, gases has been extensively used as the target medium. The gas target has constrained the applications of high order harmonic due to production of low harmonic yield thus the need to explore solid target. However, high order harmonic generation in solid has not been fully characterized since they are not synonymous to gas-phase. Here, we study the influence of doping and inhomogeneity of the laser field on high order harmonic generation in a semiconductor. Results We have theoretically investigated the high-order harmonic generation of the doped semiconductor in an inhomogeneous laser field. The results show that the high-order harmonic generation process can be effectively controlled. The harmonic spectrum is characterized by two plateau structures; first and second plateau. In the second plateau harmonic intensity was boosted on introduction of a dopant by approximately one to three orders in the homogeneous field. In addition, the impact of inhomogeneity parameter and doping rate is investigated. The results show that by altering the inhomogeneity values and the doping rate high harmonic orders can be effectively increased. Conclusion From the study, its demonstrated that control of semiconductor high order harmonic generation can be achieved by controlling the dopant, doping rate as well as the laser field. Moreover, the harmonic yield is greatly enhanced. Since the generation process encodes material characteristic, the harmonics can give insight about target structure.