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Simulation and comparision of GaAs, AlGaAs and GaInP barriers in InGaAs quantum well lasers
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Abstract
InGaAs quantum wells with GaAs, AlGaAs and GaInP barriers have been simulated, respectively. The InGaAs/GaInP structure reveals a high material gain which could be nearly 1.4 times of that of InGaAs/GaAs. Threshold current of InGaAs/GaInP structure is less than half of InGaAs/AlGaAs. A high slope efficiency of 1.57 W/A from InGaAs/GaInP structure is observed with indium content as high as 0.35. InGaAs/GaInP structure will be the most appropriate candidate to fabricate a laser diode with high slope efficiency and low threshold current.
Title: Simulation and comparision of GaAs, AlGaAs and GaInP barriers in InGaAs quantum well lasers
Description:
Abstract
InGaAs quantum wells with GaAs, AlGaAs and GaInP barriers have been simulated, respectively.
The InGaAs/GaInP structure reveals a high material gain which could be nearly 1.
4 times of that of InGaAs/GaAs.
Threshold current of InGaAs/GaInP structure is less than half of InGaAs/AlGaAs.
A high slope efficiency of 1.
57 W/A from InGaAs/GaInP structure is observed with indium content as high as 0.
35.
InGaAs/GaInP structure will be the most appropriate candidate to fabricate a laser diode with high slope efficiency and low threshold current.
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