Search engine for discovering works of Art, research articles, and books related to Art and Culture
ShareThis
Javascript must be enabled to continue!

Half-DRAM

View through CrossRef
DRAM memory is a major contributor for the total power consumption in modern computing systems. Consequently, power reduction for DRAM memory is critical to improve system-level power efficiency. Fine-grained DRAM architecture [1, 2] has been proposed to reduce the activation/ precharge power. However, those prior work either incurs significant performance degradation or introduces large area overhead. In this paper, we propose a novel memory architecture Half-DRAM, in which the DRAM array is reorganized to enable only half of a row being activated. The half-row activation can effectively reduce activation power and meanwhile sustain the full bandwidth one bank can provide. In addition, the half-row activation in Half-DRAM relaxes the power constraint in DRAM, and opens up opportunities for further performance gain. Furthermore, two half-row accesses can be issued in parallel by integrating the sub-array level parallelism to improve the memory level parallelism. The experimental results show that Half-DRAM can achieve both significant performance improvement and power reduction, with negligible design overhead
Title: Half-DRAM
Description:
DRAM memory is a major contributor for the total power consumption in modern computing systems.
Consequently, power reduction for DRAM memory is critical to improve system-level power efficiency.
Fine-grained DRAM architecture [1, 2] has been proposed to reduce the activation/ precharge power.
However, those prior work either incurs significant performance degradation or introduces large area overhead.
In this paper, we propose a novel memory architecture Half-DRAM, in which the DRAM array is reorganized to enable only half of a row being activated.
The half-row activation can effectively reduce activation power and meanwhile sustain the full bandwidth one bank can provide.
In addition, the half-row activation in Half-DRAM relaxes the power constraint in DRAM, and opens up opportunities for further performance gain.
Furthermore, two half-row accesses can be issued in parallel by integrating the sub-array level parallelism to improve the memory level parallelism.
The experimental results show that Half-DRAM can achieve both significant performance improvement and power reduction, with negligible design overhead.

Related Results

FASA-DRAM: Reducing DRAM Latency with Destructive Activation and Delayed Restoration
FASA-DRAM: Reducing DRAM Latency with Destructive Activation and Delayed Restoration
DRAM memory is a performance bottleneck for many applications, due to its high access latency. Previous work has mainly focused on data locality, introducing small-but-fast regions...
FASA-DRAM: Reducing DRAM Latency with Destructive Activation and Delayed Restoration
FASA-DRAM: Reducing DRAM Latency with Destructive Activation and Delayed Restoration
DRAM memory is a performance bottleneck for many applications, due to its high access latency. Previous work has mainly focused on data locality, introducing small but fast regions...
Fault models, test algorithms and embedded test techniques for DRAM circuits
Fault models, test algorithms and embedded test techniques for DRAM circuits
Τις τελευταίες δεκαετίες οι ηλεκτρονικές συσκευές έχουν γίνει αναπόσπαστο κομμάτι της καθημερινότητας. Αυτό οφείλεται κυρίως στη ραγδαία πρόοδο της τεχνολογίας κατασκευής Ολοκληρωμ...
Multiple clone row DRAM
Multiple clone row DRAM
Several previous works have changed DRAM bank structure to reduce memory access latency and have shown performance improvement. However, changes in the area-optimized DRAM bank can...
Modélisation, simulation et caractérisation électrique de cellule mémoire DRAM 1T : A2RAM
Modélisation, simulation et caractérisation électrique de cellule mémoire DRAM 1T : A2RAM
Avec la croissance de transfert de données, principalement à cause des applications de type internet des objets, il y a un besoin accru de système de stockage (mémoires). L’idéale ...
Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM
Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM
A capacitorless one-transistor dynamic random-access memory device (1T-DRAM) is proposed to resolve the scaling problem in conventional one-transistor one-capacitor random-access m...
Reducing memory access latency with asymmetric DRAM bank organizations
Reducing memory access latency with asymmetric DRAM bank organizations
DRAM has been a de facto standard for main memory, and advances in process technology have led to a rapid increase in its capacity and bandwidth. In contrast, its random access lat...

Back to Top