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Role of Hydrogen Plasma during Growth of Hydrogenated Microcrystalline Silicon: In Situ UV-Visible and Infrared Ellipsometry Study
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We have applied in situ UV-visible and infrared phase-modulated ellipsometry
to investigate the role of hydrogen plasma during the growth of hydrogenated microcrystalline
silicon ( µc-Si:H) by plasma-enhanced chemical vapor deposition (PECVD).
The results of the deposition of µc-Si:H from the SiH4 highly
diluted in H2, layer-by-layer (LbL) technique and post-hydrogenation experiments
showed that the 3-dimensional cross-linking and relaxation of a Si network near the
growing surface were essential for the formation of microcrystalline silicon. The major
role of hydrogen plasma is the creation of the free volumes on the growing surface due
to the inhomogeneous etching of the Si network and the promotion of the cross-linking reactions.
Title: Role of Hydrogen Plasma during Growth of Hydrogenated Microcrystalline Silicon: In Situ UV-Visible and Infrared Ellipsometry Study
Description:
We have applied in situ UV-visible and infrared phase-modulated ellipsometry
to investigate the role of hydrogen plasma during the growth of hydrogenated microcrystalline
silicon ( µc-Si:H) by plasma-enhanced chemical vapor deposition (PECVD).
The results of the deposition of µc-Si:H from the SiH4 highly
diluted in H2, layer-by-layer (LbL) technique and post-hydrogenation experiments
showed that the 3-dimensional cross-linking and relaxation of a Si network near the
growing surface were essential for the formation of microcrystalline silicon.
The major
role of hydrogen plasma is the creation of the free volumes on the growing surface due
to the inhomogeneous etching of the Si network and the promotion of the cross-linking reactions.
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