Synthesis and Electrical Properties of ZnO-ITO and Al-ITO thin Film by Spin Coating Technique Through Sol Gel Process

In this research we has investigated synthesis and electrical properties of ITO (Indium Tin Oxide) thin layers doping Aluminum (Al) and ZnO with spin-coating technique through sol-gel process and calcined at ±550 ºC for 1 hour. Effect of Al and ZnO doping on the conductivity of ITO with 0%, 1%, 3% and 5% w/v dopant concentration and the number of coating (4 and 5 layers) has reported. ITO-Al has 2 phases, these are rhombohedral and cubic, the crystal size is 67.31 nm. Meanwhile, ITO-ZnO are rhombohedral, cubic (bixbyite) and hexagonal (wurtzite), with crystallite size value was 67.4 nm. The surface morphology data indicated film thickness was 3.4 µm (ITO-Al) and 0.974 nm (ITO-ZnO). The electrical properties shows that the optimum film in 4 layers coating with the addition of 5% doping value was 17 kΩ/cm2 (ITO-Al) and 5-layered by addition of 5% of doping ZnO (80.800 kΩ/cm2). Meanwhile, ITO-Al thin film with 4 layers coating without doping was 9.331 kΩ / cm2, and for ITO-ZnO (5 layers) coating without doping was 11.796 kΩ/cm2. Al and ZnO doping decrease the electrical conductivity of ITO.