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Epitaxial Growth of γ-In2Se3 Films by Molecular Beam Epitaxy
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Epitaxial growth of γ-In2Se3 film was investigated by molecular beam epitaxy (MBE). γ-In2Se3 epiataxial films with a defect wurtzite structure were successfully grown on GaAs(111)B substrates for the first time. The crystal structure of the γ-In2Se3 epitaxial film was determined by X-ray diffraction (XRD) and atomic force microscopy (AFM). It was found that γ-In2Se3 epitaxial films exhibit a vacancy-ordered crystal structure and that sharrow hexagonal cone structures were formed on the film surface. Furthermore, optical properties of the γ-In2Se3 epitaxial films were investigated by spatially resolved cathodoluminescence (CL).
Title: Epitaxial Growth of γ-In2Se3 Films by Molecular Beam Epitaxy
Description:
Epitaxial growth of γ-In2Se3 film was investigated by molecular beam epitaxy (MBE).
γ-In2Se3 epiataxial films with a defect wurtzite structure were successfully grown on GaAs(111)B substrates for the first time.
The crystal structure of the γ-In2Se3 epitaxial film was determined by X-ray diffraction (XRD) and atomic force microscopy (AFM).
It was found that γ-In2Se3 epitaxial films exhibit a vacancy-ordered crystal structure and that sharrow hexagonal cone structures were formed on the film surface.
Furthermore, optical properties of the γ-In2Se3 epitaxial films were investigated by spatially resolved cathodoluminescence (CL).
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