Search engine for discovering works of Art, research articles, and books related to Art and Culture
ShareThis
Javascript must be enabled to continue!

Selective excitation of Fabry-Perot or whispering-gallery mode-type lasing in GaN microrods

View through CrossRef
Lasing from long semiconductor nanorods is dictated by Fabry-Perot (FP) resonances whereas that from large-diameter microrods is determined by whispering gallery modes (WGMs). Lengths and diameters intermediate between the two systems represent an important size regime for photonics and electronics, but have not been studied in detail. Here, we report on the detection of FP and WGM lasing emissions from a single GaN microrod, and demonstrate the ability to switch between the two lasing mechanisms by translating the excitation beam along the microrod. The competition between FP and WGM-type lasing was studied by finite-difference time-domain simulation and statistical analysis by measuring microrods of various diameters. Finally, control over the relative lasing intensities originating from either FPs or WGMs was demonstrated by tuning the polarization of the emission.
Title: Selective excitation of Fabry-Perot or whispering-gallery mode-type lasing in GaN microrods
Description:
Lasing from long semiconductor nanorods is dictated by Fabry-Perot (FP) resonances whereas that from large-diameter microrods is determined by whispering gallery modes (WGMs).
Lengths and diameters intermediate between the two systems represent an important size regime for photonics and electronics, but have not been studied in detail.
Here, we report on the detection of FP and WGM lasing emissions from a single GaN microrod, and demonstrate the ability to switch between the two lasing mechanisms by translating the excitation beam along the microrod.
The competition between FP and WGM-type lasing was studied by finite-difference time-domain simulation and statistical analysis by measuring microrods of various diameters.
Finally, control over the relative lasing intensities originating from either FPs or WGMs was demonstrated by tuning the polarization of the emission.

Related Results

Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
Lasing up to T = 339 K in Subwavelength Nanowire-Induced Photonic Crystal Nanocavities
Lasing up to T = 339 K in Subwavelength Nanowire-Induced Photonic Crystal Nanocavities
We report on lasing operation up to 339K in nanocavities constituted of subwavelength ZnO nanowires integrated in SiN photonic crystals. With thresholds as low as 4MW.cm-2, the inv...
Electrochemical Parameters of Aluminum Oxide Film in Situ During Anodization of Aluminum by White Light-Optical Interferometry
Electrochemical Parameters of Aluminum Oxide Film in Situ During Anodization of Aluminum by White Light-Optical Interferometry
Abstract Both of Fabry-Pérot interferometry and the DC electrochemical method have been simultaneously used for the first time to measure in situ the anodic current ...
New phenomena in high-quality suspended nanotube devices
New phenomena in high-quality suspended nanotube devices
Carbon nanotubes (CNTs) have attracted the attention of the scientific community since their discovery in the 90s. They are an excellent material for the development of research f...
(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days
(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days
GaN-based materials have been intensively developed for blue light-emitting-diodes, blue laser diodes, power amplifiers in wireless base-stations, and high-power switching devices....
(Invited) Ion Implantation into GaN and Implanted GaN Power Transistors
(Invited) Ion Implantation into GaN and Implanted GaN Power Transistors
GaN is a promising material for high-power, high-frequency and high-efficiency electron devices owing to their high saturation electron velocity and large break-down electric field...

Back to Top