ELLIPSOMETRIC SPECTRUM AND OPTICAL PROPERTIES OF ION IMPLANTED SILICON

In order to develop the ellipsometry used for determination of ion implanted damage layer, we have measured the ellipsometric spectrum of ion implanted silicon in a wavelength range of 4000-7000?. The samples were implanted by 150 keV, l015/cm2 or 1016/cm2 As ions. In this case the amorphous layers were formed at the surface of Si samples, so that a monolayer model could be used to calculate the relations of (n, k)-λ from the data of (ψ, Δ)-λ. The peak of n-λ curve of As ion implanted silicon is situated at ～4800?, and the peak value is about 4.9. The experimental results of ion implanted silicon have been compared with those of sputtering amorphous silicon, evaporated amorphous silicon and single crystalline silicon.