Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Selective Area Growth of Cubic GaN on 3C-SiC (001) by Metalorganic Molecular Beam Epitaxy
View through CrossRef
Selective area growth (SAG) of cubic GaN (c-GaN) was performed by metalorganic molecular beam epitaxy (MOMBE).
The substrates used in this study were vapor phase epitaxy (VPE)-grown 3C-SiC on Si (001) 4°-off substrates.
As a mask, 70-nm-thick SiO2 was formed by thermal oxidation of 3C-SiC and patterned by photolithography or focused ion beam (FIB) etching. GaN was grown on these patterned 3C-SiC substrates without a low-temperature-grown (LT) buffer layer. At a high growth temperature (850°C), growth of GaN did not occur even on a 3C-SiC surface. At a low temperature (800°C), c-GaN was epitaxially grown on a 3C-SiC surface, while polycrystalline GaN (poly-GaN) was grown on the SiO2-masked region. Growth of poly-GaN on the mask was suppressed by optimizing the growth temperature and V/III supply ratio. The possibility of positioning control for c-GaN microcrystals is also presented.
Title: Selective Area Growth of Cubic GaN on 3C-SiC (001) by Metalorganic Molecular Beam Epitaxy
Description:
Selective area growth (SAG) of cubic GaN (c-GaN) was performed by metalorganic molecular beam epitaxy (MOMBE).
The substrates used in this study were vapor phase epitaxy (VPE)-grown 3C-SiC on Si (001) 4°-off substrates.
As a mask, 70-nm-thick SiO2 was formed by thermal oxidation of 3C-SiC and patterned by photolithography or focused ion beam (FIB) etching.
GaN was grown on these patterned 3C-SiC substrates without a low-temperature-grown (LT) buffer layer.
At a high growth temperature (850°C), growth of GaN did not occur even on a 3C-SiC surface.
At a low temperature (800°C), c-GaN was epitaxially grown on a 3C-SiC surface, while polycrystalline GaN (poly-GaN) was grown on the SiO2-masked region.
Growth of poly-GaN on the mask was suppressed by optimizing the growth temperature and V/III supply ratio.
The possibility of positioning control for c-GaN microcrystals is also presented.
Related Results
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
A Novel Hybrid SiC-GaN Based Full-Bridge DC-DC Buck Converter with Improved Efficiency
A Novel Hybrid SiC-GaN Based Full-Bridge DC-DC Buck Converter with Improved Efficiency
<div class="section abstract"><div class="htmlview paragraph">In aerospace applications, it is important to have efficient, small, affordable, and reliable power conver...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
Characterization of MOVPE‐grown GaN layers on GaAs (111)B with a cubic‐GaN (111) epitaxial intermediate layer
Characterization of MOVPE‐grown GaN layers on GaAs (111)B with a cubic‐GaN (111) epitaxial intermediate layer
AbstractWe have proposed the use of cubic‐GaN (c‐GaN) as an intermediate layer for the metalorganic vapor phase epitaxy (MOVPE) growth of hexagonal‐GaN (h‐GaN) on GaAs (111)B subst...
Adjustments of the Rock-Eval® thermal analysis for Soil Organic and Inorganic Carbon (SOC and SIC) quantifications
Adjustments of the Rock-Eval® thermal analysis for Soil Organic and Inorganic Carbon (SOC and SIC) quantifications
Quantifying Soil Organic and Inorganic Carbon (SOC & SIC) separately in carbonate soils involves successive pretreatments and/or measurements to separate the two carbon forms. ...
(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days
(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days
GaN-based materials have been intensively developed for blue light-emitting-diodes, blue laser diodes, power amplifiers in wireless base-stations, and high-power switching devices....
Effect of different kinds of SiC fibers on microwave absorption and mechanical properties of SiCf/SiC composites
Effect of different kinds of SiC fibers on microwave absorption and mechanical properties of SiCf/SiC composites
Abstract
The SiC fibers are essential for designing microwave absorption and mechanical properties of multifunctional composites. In this study, SLF, KD-II and KD-S SiC fib...
Comparision of structural property of cubic GaN films grown by metalorganic vapor phase epitaxy on (311) and on (001) GaAs substrates / Nuttapong Discharoen
Comparision of structural property of cubic GaN films grown by metalorganic vapor phase epitaxy on (311) and on (001) GaAs substrates / Nuttapong Discharoen
Strain and hexagonal phase generation in c-GaN layers grown by metalorganic vapor phase epitaxy on (001) GaAs and on (311) GaAs substrates were investigated using HRXRD and Raman s...