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Thermal-oxidation-induced strain in 31P+-implanted Si〈100〉
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Si〈100〉 was implanted by 31P+ and annealed in Ar and O2 at 630–1150 °C. In O2 above 1000 °C a characteristic strain developed in the near-surface layer depending on the temperature of the heat treatment, but a similar effect was not observed after annealing in Ar. The formation of strain is explained by a nonperfect near-surface regrowth.
Title: Thermal-oxidation-induced strain in 31P+-implanted Si〈100〉
Description:
Si〈100〉 was implanted by 31P+ and annealed in Ar and O2 at 630–1150 °C.
In O2 above 1000 °C a characteristic strain developed in the near-surface layer depending on the temperature of the heat treatment, but a similar effect was not observed after annealing in Ar.
The formation of strain is explained by a nonperfect near-surface regrowth.
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