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Annealing induced strain in 31P+-implanted Si (111) and Si (100)
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The thermal annealing of (100) and (111) oriented Si crystals after high dose implantation with 80 keV 31P+ ions was followed by double-crystal x-ray diffractometry. Analysis of the rocking curves shows that at higher temperature annealings after regrowth at 630 °C, P atoms may leave their substitutional position at temperatures higher than 700 °C, depending upon the implantation dose and surface orientation.
Title: Annealing induced strain in 31P+-implanted Si (111) and Si (100)
Description:
The thermal annealing of (100) and (111) oriented Si crystals after high dose implantation with 80 keV 31P+ ions was followed by double-crystal x-ray diffractometry.
Analysis of the rocking curves shows that at higher temperature annealings after regrowth at 630 °C, P atoms may leave their substitutional position at temperatures higher than 700 °C, depending upon the implantation dose and surface orientation.
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