Javascript must be enabled to continue!
Interview with Ge Gan-ru
View through CrossRef
This interview is with the person rightlycalled China’s fi rst “avant-garde” composer,Ge Gan-ru. The honor is due to his 1983 compositionfor solo cello, Yi Feng (Lost Style), whichgrew out of his in-depth analysis of how Westernand Chinese music differ in their core presumptionsabout pitch, rhythm, timbre, and dynamics.A summary of that analysis is an important featureof this interview. Among other works discussedare his Wrong, Wrong, Wrong! for Voice,self-accompanied by a Toy Orchestra (2006), andhis Fifth String Quartet (2007), titled Fall of Baghdad.Interview with Ge Gan-ru for ICONI, conductedby Dr. Edward Green.
Title: Interview with Ge Gan-ru
Description:
This interview is with the person rightlycalled China’s fi rst “avant-garde” composer,Ge Gan-ru.
The honor is due to his 1983 compositionfor solo cello, Yi Feng (Lost Style), whichgrew out of his in-depth analysis of how Westernand Chinese music differ in their core presumptionsabout pitch, rhythm, timbre, and dynamics.
A summary of that analysis is an important featureof this interview.
Among other works discussedare his Wrong, Wrong, Wrong! for Voice,self-accompanied by a Toy Orchestra (2006), andhis Fifth String Quartet (2007), titled Fall of Baghdad.
Interview with Ge Gan-ru for ICONI, conductedby Dr.
Edward Green.
Related Results
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
GaN/AlGaN nanowires for quantum devices
GaN/AlGaN nanowires for quantum devices
Nanofils de GaN/AlGaN pour les composants quantiques
Ce travail se concentre sur l'ingénierie Intersubband (ISB) des nanofils où nous avons conçu des hétérostructur...
Novel approaches for robust polaritonics
Novel approaches for robust polaritonics
The possibility of having low-threshold, inversion-less lasers, makinguse of the macroscopic occupation, of the low density of states, at thebottom of the lower polariton branch, h...
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
This work demonstrates a lateral p-n junction diode formed between the two-dimensional electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN. Benefiting from the in...
(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
GaN and related compounds have received a great deal of attention from the research community due to their tunable direct bandgap, radiation hardness, and a favorable Baliga figure...
Strain measurements at
AlGaN/GaN
HEMT
structures on Silicon substrates
Strain measurements at
AlGaN/GaN
HEMT
structures on Silicon substrates
High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN are of great interest due to their high electrical performance and the related applications. The high carrier density,...
Localized epitaxy of GaN on silicon for the next generation of power electronic devices : critical for electric cars and renewable energies
Localized epitaxy of GaN on silicon for the next generation of power electronic devices : critical for electric cars and renewable energies
Épitaxie localisée de GaN sur silicium pour une nouvelle génération de transistors de puissance
Les composants à haute puissance et en particulier haute tension son...

