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Fabrication of porous Ga 2 O 3 /GaN heterojunction for ultraviolet photodetector application
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Ga
2
O
3
/GaN heterojunction has important applications in optoelectronic devices. Understanding optoelectronic performance and interface relationships of the heterojunction is the key to designing optimal devices. Herein, a porous Ga
2
O
3
/GaN heterojunction is systematically investigated. Porous GaN is initially fabricated via ultraviolet-assisted electrochemical etching and porous Ga
2
O
3
is subsequently converted from porous GaN by thermal oxidation. Compared with planar Ga
2
O
3
/GaN heterojunction, porous Ga
2
O
3
/GaN heterojunction has higher crystal quality. Porous Ga
2
O
3
/GaN heterojunction exhibits a light/dark current ratio of 10520, a responsivity of 0.108 A/W, an external quantum efficiency of 52.9%, a detectivity of 1.36 × 10
12
Jones, and the response time of 0.35 s/0.13 s under 254 nm UV irradiation (0.33 mw/cm
2
) at 0 V bias. Additionally, the operating mechanism of the device is further explored through energy band structure and carrier-transport process diagrams. This study provides valuable insights and paves the way for developing next-generation optoelectronic devices based on Ga
2
O
3
/GaN heterojunction.
Optica Publishing Group
Title: Fabrication of porous Ga
2
O
3
/GaN heterojunction for ultraviolet photodetector application
Description:
Ga
2
O
3
/GaN heterojunction has important applications in optoelectronic devices.
Understanding optoelectronic performance and interface relationships of the heterojunction is the key to designing optimal devices.
Herein, a porous Ga
2
O
3
/GaN heterojunction is systematically investigated.
Porous GaN is initially fabricated via ultraviolet-assisted electrochemical etching and porous Ga
2
O
3
is subsequently converted from porous GaN by thermal oxidation.
Compared with planar Ga
2
O
3
/GaN heterojunction, porous Ga
2
O
3
/GaN heterojunction has higher crystal quality.
Porous Ga
2
O
3
/GaN heterojunction exhibits a light/dark current ratio of 10520, a responsivity of 0.
108 A/W, an external quantum efficiency of 52.
9%, a detectivity of 1.
36 × 10
12
Jones, and the response time of 0.
35 s/0.
13 s under 254 nm UV irradiation (0.
33 mw/cm
2
) at 0 V bias.
Additionally, the operating mechanism of the device is further explored through energy band structure and carrier-transport process diagrams.
This study provides valuable insights and paves the way for developing next-generation optoelectronic devices based on Ga
2
O
3
/GaN heterojunction.
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