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Interfacial Reaction Analysis of Cu-Sn-Ni-P/Cu Joint Using Microwave Hybrid Heating

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Microwave hybrid heating (MHH) technique was used to investigate the formation of intermetallic compound layer at Cu-7.0Ni-9.3Sn-6.3P/Cu interface. Two different susceptor materials; graphite and silicon carbide were used to provide initial heating of the filler alloy before it starts couple with the microwaves and melted on the Cu surface. The interface of IMC layer was characterized using Scanning Electron Microscope (SEM), energy dispersive X-ray spectrometry (EDS) and microhardness. Metallurgical study showed the formation of the IMC layer with multiphase at the joint interface for microwave heating of both susceptor materials. The thickness of IMC layer heating in silicon carbide susceptor was three times thinner than heating in graphite susceptor; 16.5 μm and 50.5 μm, respectively. The findings showed that microwave hybrid heating can be used to join Cu-7.0Ni-9.3Sn-6.3P/Cu and controlled the thickness of IMC layer.
Title: Interfacial Reaction Analysis of Cu-Sn-Ni-P/Cu Joint Using Microwave Hybrid Heating
Description:
Microwave hybrid heating (MHH) technique was used to investigate the formation of intermetallic compound layer at Cu-7.
0Ni-9.
3Sn-6.
3P/Cu interface.
Two different susceptor materials; graphite and silicon carbide were used to provide initial heating of the filler alloy before it starts couple with the microwaves and melted on the Cu surface.
The interface of IMC layer was characterized using Scanning Electron Microscope (SEM), energy dispersive X-ray spectrometry (EDS) and microhardness.
Metallurgical study showed the formation of the IMC layer with multiphase at the joint interface for microwave heating of both susceptor materials.
The thickness of IMC layer heating in silicon carbide susceptor was three times thinner than heating in graphite susceptor; 16.
5 μm and 50.
5 μm, respectively.
The findings showed that microwave hybrid heating can be used to join Cu-7.
0Ni-9.
3Sn-6.
3P/Cu and controlled the thickness of IMC layer.

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