The Total Ionizing Dose Effects on Perovskite Cspbbr3 Semiconductor Detector

Perovskite CsPbBr 3 semiconductor exhibits unusually high defect tolerance leading to outstanding and unique optoelectronic properties and show cases strong potential for γ-radiation and X-ray detection at room temperature. However, the total dose effects of the perovskite CsPbBr3 must be considered when working in a radiation environment for long term. In this work, the Schottky type of perovskite CsPbBr3 detectors were fabricated, and their electrical characteristics, γ-ray response have been investigated before and after 60Co γ ray irradiation with the total dose of 100 and 200 krad (Si). The γ-ray response of the Schottky-type planar CsPbBr3 detector degrades significantly with the increase of total dose. At the total dose of 200 krad(Si), the spectral resolving ability to γ-ray response of the CsPbBr3 detector has disappeared, however, with annealing at room temperature for one week, the performance of the device was partially recovered. These results indicate that the detector performance of perovskite CsPbBr3 semiconductor is strongly influenced by the total dose effects. However, it is concluded that the radiation-induced defects are not permanent, which could be mitigated even at room temperature. We believed this work could provide the guidance of the future development of perovskite detectors especially under harsh radiation conditions.