Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode
View through CrossRef
The dependence of barrier height inhomogeneity on the gate metal has been investigated for the AlGaN/GaN Schottky diode. The analysis from the electroreflectance spectroscopy measurement for different types of Schottky gate metals tried (in this case, Au, Pt, Pd, and Ni) reveals that the surface donor states of AlGaN/GaN heterostructure strongly depends on the type of Schottky gate metals used, which suggests that barrier height inhomogeneity is strongly dependent on the gate metal. The X-ray photoelectron spectroscopy also reveals a strong correlation between the barrier height inhomogeneity and the gate metal type.
Title: Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode
Description:
The dependence of barrier height inhomogeneity on the gate metal has been investigated for the AlGaN/GaN Schottky diode.
The analysis from the electroreflectance spectroscopy measurement for different types of Schottky gate metals tried (in this case, Au, Pt, Pd, and Ni) reveals that the surface donor states of AlGaN/GaN heterostructure strongly depends on the type of Schottky gate metals used, which suggests that barrier height inhomogeneity is strongly dependent on the gate metal.
The X-ray photoelectron spectroscopy also reveals a strong correlation between the barrier height inhomogeneity and the gate metal type.
Related Results
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
On Flores Island, do "ape-men" still exist? https://www.sapiens.org/biology/flores-island-ape-men/
On Flores Island, do "ape-men" still exist? https://www.sapiens.org/biology/flores-island-ape-men/
<span style="font-size:11pt"><span style="background:#f9f9f4"><span style="line-height:normal"><span style="font-family:Calibri,sans-serif"><b><spa...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
Strain measurements at
AlGaN/GaN
HEMT
structures on Silicon substrates
Strain measurements at
AlGaN/GaN
HEMT
structures on Silicon substrates
High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN are of great interest due to their high electrical performance and the related applications. The high carrier density,...
Carrier Localization at Atomic‐Scale Compositional Fluctuations in Single AlGaN Nanowires with Nano‐Cathodoluminescence
Carrier Localization at Atomic‐Scale Compositional Fluctuations in Single AlGaN Nanowires with Nano‐Cathodoluminescence
Considerable interest has been generated to develop highly efficient deep ultraviolet (DUV) emitters using AlGaN‐based alloys with direct bandgaps between 3.4 – 6.1 eV for a broad ...
Advanced AlGaN/GaN HEMT technology, design, fabrication and characterization
Advanced AlGaN/GaN HEMT technology, design, fabrication and characterization
Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitations regarding its vo...
Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors
Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors
The impact of states at the insulator/AlGaN interface on the capacitance-voltage (C-V) characteristics of a metal/insulator/AlGaN/GaN heterostructure (MISH) capacitor was examined ...
Increased life expectancy of heart failure patients in a rural center by a multidisciplinary program
Increased life expectancy of heart failure patients in a rural center by a multidisciplinary program
Abstract
Funding Acknowledgements
Type of funding sources: None.
INTRODUCTION Patients with heart failure (HF)...