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Magnetic Electron Focusing Effect in GaAs/AlGaAs Heterostructure with Gate-Controlled Byway Channel
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The magnetic electron focusing effect (MEFE) is investigated using a device with two extra probes connected by a gate-controlled byway channel. The focusing peak height is inversely proportional to the byway channel resistance. The results show that the focusing peaks are caused by the current through the byway. It is found that, at most, about 9% of the total current flows in the byway when the focusing effect occurs. Moreover, a countercurrent flows in the byway when the focusing effect does not occur.
Title: Magnetic Electron Focusing Effect in GaAs/AlGaAs Heterostructure with Gate-Controlled Byway Channel
Description:
The magnetic electron focusing effect (MEFE) is investigated using a device with two extra probes connected by a gate-controlled byway channel.
The focusing peak height is inversely proportional to the byway channel resistance.
The results show that the focusing peaks are caused by the current through the byway.
It is found that, at most, about 9% of the total current flows in the byway when the focusing effect occurs.
Moreover, a countercurrent flows in the byway when the focusing effect does not occur.
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