Search engine for discovering works of Art, research articles, and books related to Art and Culture
ShareThis
Javascript must be enabled to continue!

Feasibility of Plasmonic Circuits Merged with Silicon Integrated Circuits

View through CrossRef
ABSTRACT Plasmonic signal transmission via nanoscale plasmonic waveguides is a new technique with the potential to increase the information transfer capacity in silicon integrated circuits (ICs). During propagation, surface plasmon polaritons (SPPs) exhibit characteristics of a lightwave whose transmission loss is mainly determined by the collective oscillation of electrons. Using this lightwave aspect of SPPs, information can be transmitted using plasmonic signals and optical transmission circuits and networks can be built at the micro/nanoscale. This size scale correlates well with that of electronic circuits comprising metal-oxide-semiconductor field-effect transistors (MOSFETs). In this article, the feasibility of on-chip interconnects and other circuits were discussed and confirmed on the basis of previously developed plasmonic components The first example examined herein was a wavelength-division-multiplexing circuit comprising a multiplexer and demultiplexer (in 1310 and 1550 nm-wavelength bands), discussed based on the experimental results for each component. Multiplexed signals at the multiplexer were guided into a single-mode waveguide, divided at the demultiplexer and then passed to the electronic circuits. The transmitted plasmonic signals were converted to electric signals at the slits etched on the gate electrode, thereby driving the MOSFET without photodetectors, whereupon the MOSFET-amplified signals were outputted to the electronic circuits. The second example was coherent signal transmission via plasmonic circuits. The signal transmission was performed using micro/nanoscale plasmonic circuits in a manner similar to those of optical fiber transmission systems. These coherent signal transmissions via plasmonic signals were experimentally confirmed, being detected and converted to electric signals at the slits etched on the gate electrode of the MOSFET and then outputted therefrom. These experimental examples confirmed the feasibility of plasmonic circuits integrated with MOSFETs. In plasmonic circuits, signal transmission loss is generally high compared to that of electric and lightwave signals. Herein, it was numerically confirmed again that the plasmonic signal transmission losses were lower than those of electric signals transmitted in electric circuits for plasmonic circuits not exceeding an area of a few hundred square micrometers. The loss of lightwave signals (e.g., transmitted in silicon waveguides) was much lower than those of plasmonic signals. However, as the waveguide width approached the cut-off wavelength, the loss quickly increased to be greater than that of plasmonic signals. This work indicates that plasmonic circuits have an advantage in nanoscale circuits. The circuits presented herein are currently too primitive for actual silicon IC applications, but are adequate to indicate the feasibility of merging plasmonic circuits with silicon ICs.
Title: Feasibility of Plasmonic Circuits Merged with Silicon Integrated Circuits
Description:
ABSTRACT Plasmonic signal transmission via nanoscale plasmonic waveguides is a new technique with the potential to increase the information transfer capacity in silicon integrated circuits (ICs).
During propagation, surface plasmon polaritons (SPPs) exhibit characteristics of a lightwave whose transmission loss is mainly determined by the collective oscillation of electrons.
Using this lightwave aspect of SPPs, information can be transmitted using plasmonic signals and optical transmission circuits and networks can be built at the micro/nanoscale.
This size scale correlates well with that of electronic circuits comprising metal-oxide-semiconductor field-effect transistors (MOSFETs).
In this article, the feasibility of on-chip interconnects and other circuits were discussed and confirmed on the basis of previously developed plasmonic components The first example examined herein was a wavelength-division-multiplexing circuit comprising a multiplexer and demultiplexer (in 1310 and 1550 nm-wavelength bands), discussed based on the experimental results for each component.
Multiplexed signals at the multiplexer were guided into a single-mode waveguide, divided at the demultiplexer and then passed to the electronic circuits.
The transmitted plasmonic signals were converted to electric signals at the slits etched on the gate electrode, thereby driving the MOSFET without photodetectors, whereupon the MOSFET-amplified signals were outputted to the electronic circuits.
The second example was coherent signal transmission via plasmonic circuits.
The signal transmission was performed using micro/nanoscale plasmonic circuits in a manner similar to those of optical fiber transmission systems.
These coherent signal transmissions via plasmonic signals were experimentally confirmed, being detected and converted to electric signals at the slits etched on the gate electrode of the MOSFET and then outputted therefrom.
These experimental examples confirmed the feasibility of plasmonic circuits integrated with MOSFETs.
In plasmonic circuits, signal transmission loss is generally high compared to that of electric and lightwave signals.
Herein, it was numerically confirmed again that the plasmonic signal transmission losses were lower than those of electric signals transmitted in electric circuits for plasmonic circuits not exceeding an area of a few hundred square micrometers.
The loss of lightwave signals (e.
g.
, transmitted in silicon waveguides) was much lower than those of plasmonic signals.
However, as the waveguide width approached the cut-off wavelength, the loss quickly increased to be greater than that of plasmonic signals.
This work indicates that plasmonic circuits have an advantage in nanoscale circuits.
The circuits presented herein are currently too primitive for actual silicon IC applications, but are adequate to indicate the feasibility of merging plasmonic circuits with silicon ICs.

Related Results

Plasmonic nanostructures in photodetection, energy conversion and beyond
Plasmonic nanostructures in photodetection, energy conversion and beyond
Abstract This review article aims to provide a comprehensive understanding of plasmonic nanostructures and their applications, especially on the integration of pl...
Study on Magnetic and Plasmonic Properties of Fe3O4-PEI-Au and Fe3O4-PEI-Ag Nanoparticles
Study on Magnetic and Plasmonic Properties of Fe3O4-PEI-Au and Fe3O4-PEI-Ag Nanoparticles
Magnetic–plasmonic nanoparticles (NPs) have attracted great interest in many fields because they can exhibit more physical and chemical properties than individual magnetic or plasm...
The physics and applications of a 3D plasmonic nanostructure
The physics and applications of a 3D plasmonic nanostructure
In this work, the dynamics of electromagnetic field interactions with free electrons in a 3D metallic nanostructure is evaluated theoretically. This dissertation starts by reviewin...
Conditional quantum plasmonic sensing
Conditional quantum plasmonic sensing
Abstract The possibility of using weak optical signals to perform sensing of delicate samples constitutes one of the main goals of quantum photonic sensing. Furth...
Latest Novelties on Plasmonic and Non-Plasmonic Nanomaterials for SERS Sensing
Latest Novelties on Plasmonic and Non-Plasmonic Nanomaterials for SERS Sensing
An explosion in the production of substrates for surface enhanced Raman scattering (SERS) has occurred using novel designs of plasmonic nanostructures (e.g., nanoparticle self-asse...
Hydrogel-based biosensing using plasmonic nanoparticle labels for optical biomarker detection
Hydrogel-based biosensing using plasmonic nanoparticle labels for optical biomarker detection
Plasmonic nanoparticles are widely used in biosensing strategies because their localized surface plasmon resonance (LSPR) provides unique optical properties and is highly sensitive...
Issues of technology and conditions of smelting of low-silicon cast iron in blast furnaces
Issues of technology and conditions of smelting of low-silicon cast iron in blast furnaces
The issues of technology are considered and the conditions for smelting cast iron with a low silicon content (0.2‒0.3%) in blast furnaces are discussed. The relation between the re...
Silicon Carbide
Silicon Carbide
AbstractSilicon carbide, SiC, is a crystalline material having a color that varies from nearly clear through pale yellow or green to black, depending on the amount of impurities. I...

Back to Top