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Metalorganic Vapor Phase Epitaxy of ZnSe Using Tertiarybutylselenol as Selenium Source Precursor
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Metalorganic vapor phase epitaxy of ZnSe on a GaAs substrate was carried out using a novel organic selenium source, tertiarybutylselenol (t-BuSeH), for the first time. A constant and high growth rate was attainable in the growth temperature range of 280-500°C using t-BuSeH. The low-temperature reaction between diethylzinc and t-BuSeH was virtually eliminated, therefore growth uniformity and reproducibility were satisfactory. The grown ZnSe layers were evaluated to be of high quality by photoluminescence and X-ray diffraction measurement.
Title: Metalorganic Vapor Phase Epitaxy of ZnSe Using Tertiarybutylselenol as Selenium Source Precursor
Description:
Metalorganic vapor phase epitaxy of ZnSe on a GaAs substrate was carried out using a novel organic selenium source, tertiarybutylselenol (t-BuSeH), for the first time.
A constant and high growth rate was attainable in the growth temperature range of 280-500°C using t-BuSeH.
The low-temperature reaction between diethylzinc and t-BuSeH was virtually eliminated, therefore growth uniformity and reproducibility were satisfactory.
The grown ZnSe layers were evaluated to be of high quality by photoluminescence and X-ray diffraction measurement.
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