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Quantum-well interdiffusion for integrated photonics
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Selective interdiffusion of semiconductor quantum-well (QW) structures is a versatile process for the fabrication and integration of both new and existing photonic devices. The impurity-free defect diffusion process has previously been demonstrated to facilitate continuous tuning of the effective bandgap of GaAs/AlGaAs QWs over an energy range of at least 40 meV while still preserving the room-temperature exciton-related absorptive and refractive properties of the QWs.1 In the present work the above interdiffusion process is further demonstrated to facilitate fabrication of efficient waveguide modulators operating over a wide range of wavelengths in a single epitaxial wafer. In addition, interdiffusion is demonstrated for the first time to facilitate tuning of the intersubband transitions in QWs.
Title: Quantum-well interdiffusion for integrated photonics
Description:
Selective interdiffusion of semiconductor quantum-well (QW) structures is a versatile process for the fabrication and integration of both new and existing photonic devices.
The impurity-free defect diffusion process has previously been demonstrated to facilitate continuous tuning of the effective bandgap of GaAs/AlGaAs QWs over an energy range of at least 40 meV while still preserving the room-temperature exciton-related absorptive and refractive properties of the QWs.
1 In the present work the above interdiffusion process is further demonstrated to facilitate fabrication of efficient waveguide modulators operating over a wide range of wavelengths in a single epitaxial wafer.
In addition, interdiffusion is demonstrated for the first time to facilitate tuning of the intersubband transitions in QWs.
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