Theoretical Analysis of Write Errors and Number of Stored Electrons for Ten-Nanoscale Si Floating-Dot Memory

A basic trade-off between write errors, the number of stored electrons and applied voltage was obtained for ten-nanoscale Si floating-dot memory, which was studied as a single electron device. For the ten-nanoscale dot size, more than seven electrons are necessary for reliable writing at room temperature. Furthermore, to retain writing accuracy, we have to increase the applied voltage if the floating-dot size is reduced to single electron operation. Such ten-nanoscale memory with a small number of electrons can still have a small energy consumption of about 5×10-19 J per writing operation. This will be the new target instead of using single electron devices.