Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
SOI-MOSFET/Diode Composite Photodetection Device
View through CrossRef
A new photodetection device, which is composed of a silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (SOI MOSFET) and a pn junction diode, is proposed and the operation is experimentally studied. The photodiode is connected to the body of the SOI MOSFET. Carriers photo generated in the photodiode flow to the body and induce the bipolar action of the SOI MOSFET. As a result, the diode photocurrent is amplified by the SOI MOSFET. This operation is demonstrated by the fabrication of n-channel SOI MOSFET/pn+ photodiode and p-channel SOI MOSFET/n+p photodiode composite devices. Enhancement in current amplification by an electrically floating gate is demonstrated. A rather pronounced current amplification is observed for the n-channel/pn+ device. Shrinkage of gate length results in an increase in the current amplification factor. Current amplification up to about 100 is observed by shrinking the gate length to 0.8 µm.
Title: SOI-MOSFET/Diode Composite Photodetection Device
Description:
A new photodetection device, which is composed of a silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (SOI MOSFET) and a pn junction diode, is proposed and the operation is experimentally studied.
The photodiode is connected to the body of the SOI MOSFET.
Carriers photo generated in the photodiode flow to the body and induce the bipolar action of the SOI MOSFET.
As a result, the diode photocurrent is amplified by the SOI MOSFET.
This operation is demonstrated by the fabrication of n-channel SOI MOSFET/pn+ photodiode and p-channel SOI MOSFET/n+p photodiode composite devices.
Enhancement in current amplification by an electrically floating gate is demonstrated.
A rather pronounced current amplification is observed for the n-channel/pn+ device.
Shrinkage of gate length results in an increase in the current amplification factor.
Current amplification up to about 100 is observed by shrinking the gate length to 0.
8 µm.
Related Results
NONLINEAR STATIC ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS
NONLINEAR STATIC ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS USING ANALYSIS OF COMPOSITE SHELLS
This paper presents the results of the geometric nonlinear analysis of composite shell subjected to static load by using an edge-based smoothed finite elements (ES) and the mixed i...
Đánh giá các yếu tố tiên lượng phục hồi chức năng thận sau phẫu thuật lấy sỏi niệu quản
Đánh giá các yếu tố tiên lượng phục hồi chức năng thận sau phẫu thuật lấy sỏi niệu quản
TÓM TẮT
Mục tiêu: Khảo sát các yếu tố tiên lượng phục hồi chức năng thận sau phẫu thuật lấy sỏi niệu quản.
Phương pháp: Có 39 bệnh nhân được chụp cắt lớp vi tính hệ tiết niệu có ...
DEVICE AND CIRCUIT LEVEL SIMULATION STUDY OF NOR GATE LOGIC FAMILIES DESIGNED USING NANO-MOSFETs
DEVICE AND CIRCUIT LEVEL SIMULATION STUDY OF NOR GATE LOGIC FAMILIES DESIGNED USING NANO-MOSFETs
The investigation of silicon-based nano-MOSFETs logic circuits is helpful to gain more comprehensive knowledge about nanoscale transistors. Therefore, a simulation study has been p...
Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness
Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness
Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility wit...
Research on Junction Temperature Smooth Control of SiC MOSFET Based on Body Diode Conduction Loss Adjustment
Research on Junction Temperature Smooth Control of SiC MOSFET Based on Body Diode Conduction Loss Adjustment
In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subje...
Bases neurales et multisensorielles du soi corporel : approches électrophysiologiques et comportementales
Bases neurales et multisensorielles du soi corporel : approches électrophysiologiques et comportementales
Le soi corporel, forme préréflexive du soi, repose sur plusieurs expériences corporelles, telles que la localisation du soi, le sentiment d’appartenance, l’agentivité et la perspec...
Performance Evaluation of Datapath designs using FinFET and MOSFET
Performance Evaluation of Datapath designs using FinFET and MOSFET
The VLSI Technology has been progressing significantly and the circuits which consume less power become major concern factor for designing todays ICs for Microprocessors and other ...
PERANCANGAN SYNCHRONOUS POWER CONVERTER TIPE BUCK BERBASIS ATMEGA16
PERANCANGAN SYNCHRONOUS POWER CONVERTER TIPE BUCK BERBASIS ATMEGA16
Ciri khas pada elektronika daya adalah efisiensi, penggunaan regulator linear dengan berdasarkan prinsip pembagi tegangan atau pembagi arus dinilai sudah tidak efisien karena bany...